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1

A multiple-negative-differential-resistance switch with double InGaP barriers

Guo, Der-Feng, Cheng, Chin-Chuan, Lin, Kun-Wei, Liu, Wen-Chau, Lin, Wei

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 349 KB

english, 1996

2

[IEEE 2009 IEEE International Vacuum Electronics Conference (IVEC) - Rome, Italy (2009.04.28-2009.04.30)] 2009 IEEE International Vacuum Electronics Conference - An optoelectronic switch

Der-Feng Guo,, Wen-Chau Liu,, Jung-Hui Tsai,

Year:

2009

Language:

english

File:

PDF, 429 KB

english, 2009

3

[IEEE 1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] - Taipei, Taiwan (March 6-7, 1993)] 1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] - GaAs Bipolar Transistor with a Triple-Well Emitter Structure

Wen-Chau Liu,, Der-Feng Guo,, Wen-Shiung Lour,, Chung-Yih Sun,

Year:

1993

Language:

english

File:

PDF, 164 KB

english, 1993

4

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Chen, Wei-Cheng, Niu, Jing-Shiuan, Liu, I-Ping, Lee, Yu-Lin, Cheng, Shiou-Ying, Guo, Der-Feng, Liu, Wen-Chau

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 2.07 MB

2020

5

A low damage GaN-based light-emitting diode with textured/inclined sidewalls and an air–buffer layer

Yi-Jung Liu, Tsung-Yuan Tsai, Kuo-Hui Yu, Der-Feng Guo, Li-Yang Chen, Tsung-Han Tsai, Wen-Chau Liu

Journal:

Year:

2010

Language:

english

File:

PDF, 297 KB

english, 2010

6

High-performance InGaP/GaAspnpδ-doped heterojunction bipolar transistor

Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo

Journal:

Year:

2009

Language:

english

File:

PDF, 194 KB

english, 2009

7

Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor

Chen, Li-Yang, Cheng, Shiou-Ying, Lour, Wen-Shiung, Tsai, Jung-Hui, Guo, Der-Feng, Tsai, Tsung-Han, Chen, Tzu-Pin, Liu, Yi-Chun, Liu, Wen-Chau

Journal:

Semiconductor Science and Technology

Year:

2008

Language:

english

File:

PDF, 232 KB

english, 2008

8

InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures

Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu, Yi-Zhen Wu, Ying-Feng Dai

Journal:

Year:

2010

Language:

english

File:

PDF, 195 KB

english, 2010

9

Investigation of the Electrostatic Discharge Performance of GaN-Based Light-Emitting Diodes With Naturally Textured p-GaN Contact Layers Grown on Miscut Sapphire Substrates

Yi-Jung Liu, Der-Feng Guo, Li-Yang Chen, Tsung-Han Tsai, Chien-Chang Huang, Tai-You Chen, Chi-Hsiang Hsu, Wen-Chau Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 798 KB

english, 2010

10

[IEEE 2007 International Conference on Microelectronics - ICM - Cairo, Egypt (2007.12.29-2007.12.31)] 2007 Internatonal Conference on Microelectronics - A pnpn GaAs-InGaAs optoelectronic switch

Der-Feng Guo,, Jung-Hui Tsai,, Chien-Ming Li,

Year:

2007

Language:

english

File:

PDF, 615 KB

english, 2007

11

Application of a triple-well superlattice emitter structure to GaAs switching device

Guo, Der-Feng, Liu, Wen-Chau, Lour, Wen-Shiung, Sun, Chung-Yih, Liu, Rong-Chau

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 643 KB

english, 1992

12

Characteristics Improvement for an n–p–n Heterostructure Optoelectronic Switch by Introducing a Wide-Gap Layer in the Collector

Guo, Der-Feng, Yen, Chih-Hung, Tsai, Jung-Hui, Lour, Wen-Shiung, Liu, Wen-Chau

Journal:

Journal of The Electrochemical Society

Year:

2007

Language:

english

File:

PDF, 178 KB

english, 2007

13

Characteristics of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT)

Tsai, Jung-Hui, Guo, Der-Feng, Kang, Yu-Chi, Weng, Tzu-Yen

Journal:

Physica Scripta

Year:

2007

Language:

english

File:

PDF, 415 KB

english, 2007

14

A new GaAs switching device with double-confinement-collector structure

Wen-Chau Liu, Der-Feng Guo

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 610 KB

english, 1992

15

Investigation of Amplifying and Switching Characteristics in Double Heterostructure-Emitter Bipolar Transistors

Guo, Der-Feng, Yen, Chih-Hung, Tsai, Jung-Hui, Lour, Wen-Shiung, Liu, Wen-Chau

Journal:

Journal of The Electrochemical Society

Year:

2007

Language:

english

File:

PDF, 252 KB

english, 2007

16

Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers

Jung-Hui Tsai, Sheng-Shiun Ye, Der-Feng Guo, Wen-Shiung Lour

Journal:

Year:

2012

Language:

english

File:

PDF, 241 KB

english, 2012

17

Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor

Liu, Wen-Chau, Sun, Chung-Yih, Hsu, Wei-Chou, Guo, Der-Feng

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 2.55 MB

1993

18

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] -

Year:

2010

Language:

english

File:

PDF, 545 KB

english, 2010

19

Characteristics of a new BBOS with an AlGaAs-δ(n+)-GaAs-InAlGaP collector structure

Der-Feng Guo, Jing-Yuh Chen, Hung-Ming Chuang, Chun-Yuan Chen, Wen-Chau Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 245 KB

english, 2004

20

Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors

Chen, Tzu-Pin, Fu, Ssu-I, Liu, Wen-Chau, Cheng, Shiou-Ying, Tsai, Jung-Hui, Guo, Der-Feng, Lour, Wen-Shiung

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 354 KB

english, 2007

21

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Miniband-Resonant-Tunneling Optoelectronic Device

Year:

2011

Language:

english

File:

PDF, 834 KB

english, 2011

22

A multistate switch based on the carrier tunneling and confinement effects of barrier

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 283 KB

english, 1997

23

Regenerative switching properties of a sawtooth-doping-superlattice-collector bipolar transistor

Liu, Wen-Chau, Sun, Chung-Yih, Guo, Der-Feng

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 698 KB

english, 1992

24

[IEEE 2010 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2010.05.8-2010.05.11)] 2010 International Conference on Microwave and Millimeter Wave Technology - InGaP/GaAs/InGaAs doped-channel field-effect transistor using camel-like gate structure

Tsai, Jung-Hui, Guo, Der-Feng, Lee, Yuan-Hong, Dale, Ning-Feng, Lour, Wen-Shiung

Year:

2010

Language:

english

File:

PDF, 130 KB

english, 2010

25

[IEEE IVESC 2004. The 5th International Vacuum Electron Sources - Beijing, China (6-10 Sept. 2004)] IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) - Characteristics of a double-barrier-emitter triangular-barrier ptoelectronic switch (DTOS)

Jing-Yuh Chen,, Der-Feng Guo,, Chun-Yuan Chen,, Po-Hsien Lai,, Yan-Ying Tsai,, Wen-Chau Liu,

Year:

2004

Language:

english

File:

PDF, 162 KB

english, 2004

26

[IEEE 1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] - Taipei, Taiwan (March 6-7, 1993)] 1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] - Investigation of GaAs Doping Superlattice Structure

Wen-Chau Liu,, Chung-Yih Sun,, Der-Feng Guo,, Wen-Shiung Lour,

Year:

1993

Language:

english

File:

PDF, 184 KB

english, 1993

27

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] -

Year:

2010

Language:

english

File:

PDF, 625 KB

english, 2010

28

On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 344 KB

english, 2009

29

Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns

Hsu, Chi-Shiang, Chen, Sheng-Yi, Liou, Jian-Kai, Chen, Wei-Cheng, Chang, Ching-Hong, Chen, Chun-Yen, Cheng, Shiou-Ying, Guo, Der-Feng, Liu, Wen-Chau

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.09 MB

english, 2017

30

Characteristics of bulk-barrier switching devices with InGaAsGaAs delta-doped quantum wells

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 446 KB

english, 1996

31

Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

Jung-Hui Tsai, Der-Feng Guo, Wen-Shiung Lour

Journal:

Year:

2011

Language:

english

File:

PDF, 163 KB

english, 2011

32

GaAs-InGaAs double delta-doped quantum-well switching device prepared by molecular beam epitaxy

Hsu, Wei-Chou, Liu, Wen-Chau, Guo, Der-Feng, Lour, Wen-Shiung

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 553 KB

english, 1993

33

GaAs-InGaAs quantum-well resonant-tunneling switching device grown by molecular beam epitaxy

Liu, Wen-Chau, Guo, Der-Feng, Yih, Shiuh-Ren, Liang, Jing-Tong, Liah, Lih-Wen, Lyuu, Gau-Ming

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 571 KB

english, 1994

34

A Confinement-Collector GaAs Switching Device Prepared by Molecular Beam Epitaxy

Liu, Wen-Chau, Guo, Der-Feng, Lee, Yeong-Shyang

Journal:

Japanese Journal of Applied Physics

Year:

1991

File:

PDF, 881 KB

1991

35

Temperature Effect of a Heterojunction Bipolar Transistor with an Emitter-Edge-Thinning Structure

Chen, Tzu-Pin, Fu, Ssu-I, Lour, Wen-Shiung, Tsai, Jung-Hui, Guo, Der-Feng, Liu, Wen-Chau

Journal:

Electrochemical and Solid-State Letters

Year:

2007

Language:

english

File:

PDF, 76 KB

english, 2007

36

Regenerative Switching Phenomenon of a GaAs Metal-n-δ(p + )-n-n + Structure

Guo, Der-Feng, Yeou, Wen-Chen, Lour, Wen-Shiung, Hsu, Wei-Chou, Liu, Wen-Chau

Journal:

Japanese Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 145 KB

english, 1993

37

SAE Technical Paper Series [SAE International 34th Intersociety Energy Conversion Engineering Conference - (AUG. 02, 1999)] SAE Technical Paper Series - A Triangular-Barrier Optoelectronic Switch with Light-Controllable Performances

Year:

1999

Language:

english

File:

PDF, 179 KB

english, 1999

38

[IEEE 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Matsue, Japan (2007.05.14-2007.05.18)] 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - An Optoelectronic Switch with Multiple Operation States

Guo, Der-Feng, Tsai, Jung-Hui, Weng, Tzu-Yen

Year:

2007

Language:

english

File:

PDF, 1.65 MB

english, 2007

39

[IEEE 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA (2006.12.6-2006.12.8)] 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - An improved InP/InGaAs pnp HBT with δ-doped sheet between emitter-base junction

Jung-Hui Tsai,, Der-Feng Guo,, Tzu-Yen Weng,, Yu-Chi Kang,, Ching-Han Wu,, I-Hsuan Hsu,

Year:

2006

Language:

english

File:

PDF, 2.01 MB

english, 2006

40

Negative-differential-resistance characteristics in a triangular-barrier resonant tunnelling switch

Journal:

Semiconductor Science and Technology

Year:

1998

Language:

english

File:

PDF, 160 KB

english, 1998

41

A new resonant-tunneling bipolar transistor with triple-well emitter structure

Wen-Chao Liu, Yeong-Shyang Lee, Der-Feng Guo

Journal:

Solid-State Electronics

Year:

1991

Language:

english

File:

PDF, 425 KB

english, 1991

42

Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

Chen, Tzu-Pin, Fu, Ssu-I, Tsai, Jung-Hui, Lour, Wen-Shiung, Guo, Der-Feng, Cheng, Shiou-Ying, Liu, Wen-Chau

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

43

Heterostructure confinement effect on the negative-differential-resistance (NDR) bipolar transistor

Wen-Chau Liu, Jun-Hui Tsai, Lih-Wen Laih, Cheng-Zu, Kong-Beng Thei, Wen-Shiung Lour, Der-Feng Guo

Journal:

Superlattices and Microstructures

Year:

1995

File:

PDF, 751 KB

1995

44

Characteristics of a GaAs metal-n+-v-δ (p+)-v-n+ switch

Der-Feng Guo, Shiu-Ren Yih, Jing-Tong Liang, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 451 KB

english, 1994

45

Resonant tunneling characteristics of a delta-doped strained-layer quantum-well switching device (δ-SQSD)

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 433 KB

english, 1996

46

Optoelectronic switch performance in double heterostructure-emitter bipolar transistor

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 89 KB

english, 2001

47

Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction

Yi-Jung Liu, Der-Feng Guo, Kuei-Yi Chu, Shiou-Ying Cheng, Jian-Kai Liou, Li-Yang Chen, Tsung-Han Tsai, Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Tsung-Yuan Tsai, Wen-Chau Liu

Journal:

Year:

2011

Language:

english

File:

PDF, 397 KB

english, 2011

48

[IEEE 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, Australia (2006.12.6-2006.12.8)] 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - An AlGaAs/GaAs/InAlGaP Optoelectronic Switch

Weng, Tzu-Yen, Tsai, Jung-Hui, Guo, Der-Feng

Year:

2006

Language:

english

File:

PDF, 1.88 MB

english, 2006

49

[IEEE 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, Australia (2006.12.6-2006.12.8)] 2006 Conference on Optoelectronic and Microelectronic Materials and Devices - An Optoelectronic Switch with Multiple Operation States

Weng, Tzu-Yen, Tsai, Jung-Hui, Guo, Der-Feng

Year:

2006

Language:

english

File:

PDF, 1.50 MB

english, 2006

50

Characteristics of a GaAs-InGaAs delta-doped quantum-well switch

Hsu, Wei-Chou, Guo, Der-Feng, Liu, Wen-Chau, Lour, Wen-Shiung

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 581 KB

english, 1993

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